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DIP-Induktivität

TGCX

Flachdraht-Hochstrom-Leistungsinduktivität

Exceptionally low DC resistance and core loss

Soft saturation current rating over 70A

TGCL

Flachdraht-Hochstrom-Leistungsinduktivität

Exceptionally low DC resistance

High Q value, high energy storage

TGPGL

Flachdraht-Hochstrom-Leistungsinduktivität

Flat wire construction,low DC resistance

Soft saturation, can handle high peak current

TGPGX

Flachdraht-Hochstrom-Leistungsinduktivität

Exceptionally low DC resistance and core loss

Soft saturation current rating over 45A

TGO

Flachdraht-Hochstrom-Leistungsinduktivität

Flat wire construction,low DC resistance

Vertical SMD structure, saving installation space

TGK

Flachdraht-Hochstrom-Leistungsinduktivität

Flat wire construction,low DC resistance

Vertical DIP structure, saving installation space

TGPGL

Flachdraht-Hochstrom-Leistungsinduktivität

Exceptionally low DC resistance and core loss

Soft saturation current rating over 65A

TGPM

Flachdraht-Hochstrom-Leistungsinduktivität

High saturation current and stable frequency characteristics

Third mounting pad for greater stability and board adhesion

TGPE

Flachdraht-Hochstrom-Leistungsinduktivität

Flat wire construction, good heat dissipation

Magnetically shielded to minimize EMI

TGPF

Flachdraht-Hochstrom-Leistungsinduktivität

Magnetic shielding structure, low core loss

Third mounting pad for greater stability and board adhesion

TGGF

Flachdraht-Hochstrom-Leistungsinduktivität

Magnetic shielding structure, low core loss

Through-hole (TH) mounting for rugged board attachment

TGIA

Hochstrom-Leistungsinduktivität für Digital APM

Flat wire construction, low DC resistance

Magnetically shielded to minimize EMI

TGN

Flachdraht-Hochstrom-Leistungsinduktivität

Small volume, high energy storage

High power output, low loss

TGL

Abgeschirmte Hochstrom-Leistungsinduktivität

Flat wire construction, low DC and AC resistance

Metal shield structure to minimize EMI

TGGE

Verlustarme Hochstrom-Leistungsinduktivität

High saturation current load capability

Effectively reduce thermal aging

TGHX

Verlustarme Hochstrom-Leistungsinduktivität

Flat wire construction with low resistance

High saturation current load capability

TGIL

Verlustarme Hochstrom-Leistungsinduktivität

High saturation current load capability

Good insulation performance, low AC loss

TGHR

Verlustarme Hochstrom-Leistungsinduktivität

High power output, low loss

Effectively reduce thermal aging

TGIS

Abgeschirmte Hochstrom-Leistungsinduktivität

High power output, low loss

Metal shield structure to minimize EMI

TGQU

Hochfrequenz-Hochstrom-Leistungsinduktivität

Small volume, high energy storage

Ultra low DC resistance

TGTB

Molding Power Choke

Ultra low DC resistance, high power output

Excellent DC bias capability

TGBB

Molding Power Choke

Excellent DC bias capability

Shield structure, suitable for high density mounting

TGIR

Hochfrequenz-Hochstrom-Leistungsinduktivität

High energy storage

Ultra low DC resistance

TGBC

Molding Power Choke

Excellent DC bias capability

Low core loss at high frequency

TGQI

Hochfrequenz-Hochstrom-Leistungsinduktivität

Small volume,excellent SRF characteristic, high energy storage

High-precision DC resistance, high current

TGQE

Hochfrequenz-Hochstrom-Leistungsinduktivität

Small volume,excellent SRF characteristic, high energy storage

High-precision DC resistance, high current

TGSB

High current molding power chokes

Small volume, high current, suitable for high density mounting

Combined material achieves low loss

TGAG

Flachdraht-Hochstrom-Leistungsinduktivität

Assemblage design, sturdy structure.

Hot dipped Sn plating provides low risk of whisker growth.

TGDV

Leistungsdrosseln für die Automobilindustrie

Lightweight design, high Q value, low impedance

AEC-Q200 qualified

TGRV

Flachdraht-Hochstrom-Leistungsinduktivität

Symmetrical air gap , improve saturation current capability

AEC-Q200 qualified

TGUB

Low profile molding power choke

High performance (Isat) realized by metal dust core

Low loss realized with low DCR

TGD

High current power inductor for Digital AMP

2 in 1 structure, saving space

High sound quality and low distortion

TGMX

Flachdraht-Hochstrom-Leistungsinduktivität

Flat wire construction with low resistance

High power output, low loss

TGV

High current power inductor for Digital AMP

Magnetically shielded to minimize EMI

Low loss material, high power output

TGSC

High current molding power chokes

Small volume, high current, suitable for high density mounting

Combined material achieves low loss

TGE

High current power inductor for Digital AMP

Vertical 2 in 1 structure, saving space

High current, low core loss

TG

Trommelkern/SMD-Typ

Low DC resistance

Unshielded, with high inductance

TGBD

High current power inductor for Digital AMP

2 in 1 structure, saving space

High sound quality and low distortion

TGJ

Abschirmung/Trommelkern/SMD-Typ

Low magnetic leakage

Wide frequency range

TGJR

Abschirmung/Trommelkern/SMD-Typ

Shield structure

Wide frequency range

TGX

Abschirmung/Trommelkern/SMD-Typ

Low profile design

Shield structure

TGIB

Trommelkern/SMD-Typ

Unshielded structure

Strong vibration resistance

TGEL

Abschirmung/Trommelkern/SMD-Typ

Strong vibration resistance

Shield structure

TGIC

Abschirmung/Trommelkern/SMD-Typ

Flat Shield structure

Suitable for high density mounting

TGY

Abschirmung/Trommelkern/SMD-Typ

Shield structure

Suitable for high density mounting

TGRZ

Stab-Induktor

High saturation current

Low DC resistance

TGRE

Stab-Induktor

High saturation current

Low DC resistance

TGID

Stab-Induktor

High saturation current

Low DC resistance

TGIF

Stab-Induktor

High saturation current

AEC-Q200 qualified

TGKH

Trommelkern/DIP-Typ

Unshielded, through-hole design

Customized design is available

TGSI

Trommelkern/DIP-Typ

Unshielded, through-hole design

Customized design is available

TGIJ

Shield/Drum-Kern/DIP-Typ

Shield structure, reduce EMI

Low cost and high efficiency

TGIK

Shield/Drum-Kern/DIP-Typ

Shield structure, reduce EMI

Low cost and high efficiency

TGHG

Trommelkern/DIP-Typ

Unshielded, through-hole design

Customized design is available

No. Teile-Nr. Typ Test Conditions Inductance(μH) Tolerance DCR Typical(mΩ) Isat(A) Irms(A) Working(℃) Länge Breite Höhe Datei
1 TGHG3525T-562K DIP-Induktivität 1.0KHz/0.25V 5600 ±10% 1220 3.6 2.02 -40~125 40 40 28
2 TGHG3525T-472K DIP-Induktivität 1.0KHz/0.25V 4700 ±10% 1190 3.9 2.06 -40~125 40 40 28
3 TGHG3525T-332K DIP-Induktivität 1.0KHz/0.25V 3300 ±10% 589 4.6 2.93 -40~125 40 40 28
4 TGHG3525T-222K DIP-Induktivität 1.0KHz/0.25V 2200 ±10% 380 5.8 3.33 -40~125 40 40 28
5 TGHG3525T-102K DIP-Induktivität 1.0KHz/0.25V 1000 ±10% 235 8 3.65 -40~125 40 40 28
6 TGKH1016-102K DIP-Induktivität 1KHz/0.25V 1000 ±10% 983 1.35 0.82 -40~125 12.5 12.5 18.5
7 TGKH1016-821K DIP-Induktivität 1KHz/0.25V 820 ±10% 862 1.45 0.91 -40~125 12.5 12.5 18.5
8 TGKH1016-681K DIP-Induktivität 1KHz/0.25V 680 ±10% 693 1.55 1.02 -40~125 12.5 12.5 18.5
9 TGKH1016-561K DIP-Induktivität 1KHz/0.25V 560 ±10% 533 1.7 1.13 -40~125 12.5 12.5 18.5
10 TGKH1016-471K DIP-Induktivität 1KHz/0.25V 470 ±10% 478 1.8 1.21 -40~125 12.5 12.5 18.5
11 TGKH1016-391K DIP-Induktivität 1KHz/0.25V 390 ±10% 396 2 1.33 -40~125 12.5 12.5 18.5
12 TGKH1016-331K DIP-Induktivität 1KHz/0.25V 330 ±10% 353 2.2 1.4 -40~125 12.5 12.5 18.5
13 TGKH1016-271K DIP-Induktivität 1KHz/0.25V 270 ±10% 283 2.4 1.58 -40~125 12.5 12.5 18.5
14 TGKH1016-221K DIP-Induktivität 1KHz/0.25V 220 ±10% 246 2.6 1.69 -40~125 12.5 12.5 18.5
15 TGKH1016-181K DIP-Induktivität 1KHz/0.25V 180 ±10% 181 2.9 1.95 -40~125 12.5 12.5 18.5
16 TGKH1016-151K DIP-Induktivität 1KHz/0.25V 150 ±10% 165 3.3 2.06 -40~125 12.5 12.5 18.5
17 TGKH1016-121K DIP-Induktivität 1KHz/0.25V 120 ±10% 143 3.5 2.23 -40~125 12.5 12.5 18.5
18 TGKH1016-101K DIP-Induktivität 1KHz/0.25V 100 ±10% 108 4 2.55 -40~125 12.5 12.5 18.5
19 TGKH1016-820K DIP-Induktivität 1KHz/0.25V 82 ±10% 82.5 4.5 2.9 -40~125 12.5 12.5 18.5
20 TGKH1016-680K DIP-Induktivität 1KHz/0.25V 68 ±10% 74.3 4.9 3.1 -40~125 12.5 12.5 18.5
21 TGKH1016-560K DIP-Induktivität 1KHz/0.25V 56 ±10% 66.2 5.6 3.3 -40~125 12.5 12.5 18.5
22 TGKH1016-470K DIP-Induktivität 1KHz/0.25V 47 ±10% 51.3 5.9 3.7 -40~125 12.5 12.5 18.5
23 TGKH1016-390K DIP-Induktivität 1KHz/0.25V 39 ±10% 45.9 6.3 3.9 -40~125 12.5 12.5 18.5
24 TGKH1016-330K DIP-Induktivität 1KHz/0.25V 33 ±10% 40.9 7 4.09 -40~125 12.5 12.5 18.5
25 TGKH1016-270K DIP-Induktivität 1KHz/0.25V 27 ±10% 38.2 7.8 4.29 -40~125 12.5 12.5 18.5
26 TGKH1016-220K DIP-Induktivität 1KHz/0.25V 22 ±10% 33.7 8.4 4.46 -40~125 12.5 12.5 18.5
27 TGKH1016-180K DIP-Induktivität 1KHz/0.25V 18 ±10% 30.9 9.6 4.75 -40~125 12.5 12.5 18.5
28 TGKH1016-150K DIP-Induktivität 1KHz/0.25V 15 ±10% 27.8 10 4.94 -40~125 12.5 12.5 18.5
29 TGKH1016-120K DIP-Induktivität 1KHz/0.25V 12 ±10% 25 11.8 5.3 -40~125 12.5 12.5 18.5
30 TGKH0912-821K DIP-Induktivität 1KHz/0.25V 820 ±10% 810 0.56 0.83 -40~125 11.5 11.5 13.8
31 TGKH0912-681K DIP-Induktivität 1KHz/0.25V 680 ±10% 722 0.61 0.87 -40~125 11.5 11.5 13.8
32 TGKH1016-100K DIP-Induktivität 1KHz/0.25V 10 ±10% 21.7 12.9 5.87 -40~125 12.5 12.5 18.5
33 TGKH0912-102K DIP-Induktivität 1KHz/0.25V 1000 ±10% 1093 0.48 0.69 -40~125 11.5 11.5 13.8
34 TGKH0912-561K DIP-Induktivität 1KHz/0.25V 560 ±10% 578 0.74 0.96 -40~125 11.5 11.5 13.8
35 TGKH0912-471K DIP-Induktivität 1KHz/0.25V 470 ±10% 477 0.82 1.08 -40~125 11.5 11.5 13.8
36 TGKH0912-391K DIP-Induktivität 1KHz/0.25V 390 ±10% 408 0.88 1.13 -40~125 11.5 11.5 13.8
37 TGKH0912-331K DIP-Induktivität 1KHz/0.25V 330 ±10% 333 0.97 1.27 -40~125 11.5 11.5 13.8
38 TGKH0912-271K DIP-Induktivität 1KHz/0.25V 270 ±10% 262 1.08 1.45 -40~125 11.5 11.5 13.8
39 TGKH0912-221K DIP-Induktivität 1KHz/0.25V 220 ±10% 231 1.15 1.54 -40~125 11.5 11.5 13.8
40 TGKH0912-181K DIP-Induktivität 1KHz/0.25V 180 ±10% 183 1.32 1.73 -40~125 11.5 11.5 13.8
41 TGKH0912-151K DIP-Induktivität 1KHz/0.25V 150 ±10% 162 1.45 1.84 -40~125 11.5 11.5 13.8
42 TGKH0912-121K DIP-Induktivität 1KHz/0.25V 120 ±10% 139 1.55 1.94 -40~125 11.5 11.5 13.8
43 TGKH0912-101K DIP-Induktivität 1KHz/0.25V 100 ±10% 105 1.65 2.21 -40~125 11.5 11.5 13.8
44 TGKH0912-820K DIP-Induktivität 1KHz/0.25V 82 ±10% 91.4 1.9 2.36 -40~125 11.5 11.5 13.8
45 TGKH0912-680K DIP-Induktivität 1KHz/0.25V 68 ±10% 71.4 2 2.78 -40~125 11.5 11.5 13.8
46 TGKH0912-560K DIP-Induktivität 1KHz/0.25V 56 ±10% 63.7 2.1 2.97 -40~125 11.5 11.5 13.8
47 TGKH0912-470K DIP-Induktivität 1KHz/0.25V 47 ±10% 57.7 2.35 3.05 -40~125 11.5 11.5 13.8
48 TGKH0912-390K DIP-Induktivität 1KHz/0.25V 39 ±10% 45.2 2.7 3.49 -40~125 11.5 11.5 13.8
49 TGKH0912-330K DIP-Induktivität 1KHz/0.25V 33 ±10% 41.1 2.8 3.66 -40~125 11.5 11.5 13.8
50 TGKH0912-270K DIP-Induktivität 1KHz/0.25V 27 ±10% 32.3 3.1 4.13 -40~125 11.5 11.5 13.8
51 TGKH0912-220K DIP-Induktivität 1KHz/0.25V 22 ±10% 28.2 3.2 4.43 -40~125 11.5 11.5 13.8
52 TGKH0912-180K DIP-Induktivität 1KHz/0.25V 18 ±10% 25.3 4.1 4.73 -40~125 11.5 11.5 13.8
53 TGKH0912-150K DIP-Induktivität 1KHz/0.25V 15 ±10% 22.4 4.4 4.96 -40~125 11.5 11.5 13.8
54 TGKH0912-120K DIP-Induktivität 1KHz/0.25V 12 ±10% 19.1 4.7 5.37 -40~125 11.5 11.5 13.8
55 TGKH0912-100K DIP-Induktivität 1KHz/0.25V 10 ±10% 17.7 4.8 5.6 -40~125 11.5 11.5 13.8
56 TGKH0810-103K DIP-Induktivität 1KHz/0.25V 10000 ±10% 14400 0.13 0.17 -40~125 9.5 9.5 12.5
57 TGKH0810-472K DIP-Induktivität 1KHz/0.25V 4700 ±10% 6400 0.19 0.26 -40~125 9.5 9.5 12.5
58 TGKH0810-222K DIP-Induktivität 1KHz/0.25V 2200 ±10% 3080 0.25 0.37 -40~125 9.5 9.5 12.5
59 TGKH0810-102K DIP-Induktivität 1KHz/0.25V 1000 ±10% 1596 0.37 0.51 -40~125 9.5 9.5 12.5
60 TGKH0810-821K DIP-Induktivität 1KHz/0.25V 820 ±10% 1282 0.39 0.57 -40~125 9.5 9.5 12.5
61 TGKH0810-681K DIP-Induktivität 1KHz/0.25V 680 ±10% 1046 0.47 0.66 -40~125 9.5 9.5 12.5
62 TGKH0810-561K DIP-Induktivität 1KHz/0.25V 560 ±10% 788 0.49 0.76 -40~125 9.5 9.5 12.5
63 TGKH0810-471K DIP-Induktivität 1KHz/0.25V 470 ±10% 668 0.53 0.85 -40~125 9.5 9.5 12.5
64 TGKH0810-391K DIP-Induktivität 1KHz/0.25V 390 ±10% 534 0.59 0.96 -40~125 9.5 9.5 12.5
65 TGKH0810-331K DIP-Induktivität 1KHz/0.25V 330 ±10% 441 0.64 1.07 -40~125 9.5 9.5 12.5
66 TGKH0810-271K DIP-Induktivität 1KHz/0.25V 270 ±10% 386 0.67 1.13 -40~125 9.5 9.5 12.5
67 TGKH0810-221K DIP-Induktivität 1KHz/0.25V 220 ±10% 311 0.8 1.26 -40~125 9.5 9.5 12.5
68 TGKH0810-181K DIP-Induktivität 1KHz/0.25V 180 ±10% 268 0.87 1.36 -40~125 9.5 9.5 12.5
69 TGKH0810-151K DIP-Induktivität 1KHz/0.25V 150 ±10% 210 0.95 1.55 -40~125 9.5 9.5 12.5
70 TGKH0810-121K DIP-Induktivität 1KHz/0.25V 120 ±10% 181 1.1 1.65 -40~125 9.5 9.5 12.5
71 TGKH0810-101K DIP-Induktivität 1KHz/0.25V 100 ±10% 160 1.15 1.77 -40~125 9.5 9.5 12.5
72 TGKH0810-820K DIP-Induktivität 1KHz/0.25V 82 ±10% 133 1.3 1.92 -40~125 9.5 9.5 12.5
73 TGKH0810-680K DIP-Induktivität 1KHz/0.25V 68 ±10% 103 1.36 2.19 -40~125 9.5 9.5 12.5
74 TGKH0810-560K DIP-Induktivität 1KHz/0.25V 56 ±10% 92 1.54 2.36 -40~125 9.5 9.5 12.5
75 TGKH0810-470K DIP-Induktivität 1KHz/0.25V 47 ±10% 70.7 1.6 2.61 -40~125 9.5 9.5 12.5
76 TGKH0810-390K DIP-Induktivität 1KHz/0.25V 39 ±10% 61.7 1.85 2.79 -40~125 9.5 9.5 12.5
77 TGKH0810-330K DIP-Induktivität 1KHz/0.25V 33 ±10% 47.5 2.05 3.22 -40~125 9.5 9.5 12.5
78 TGKH0810-270K DIP-Induktivität 1KHz/0.25V 27 ±10% 44 2.2 3.42 -40~125 9.5 9.5 12.5
79 TGKH0810-220K DIP-Induktivität 1KHz/0.25V 22 ±10% 36.6 2.45 3.68 -40~125 9.5 9.5 12.5
80 TGKH0810-180K DIP-Induktivität 1KHz/0.25V 18 ±10% 29.7 2.8 4.08 -40~125 9.5 9.5 12.5
81 TGKH0810-150K DIP-Induktivität 1KHz/0.25V 15 ±10% 25.9 2.9 4.37 -40~125 9.5 9.5 12.5
82 TGKH0810-120K DIP-Induktivität 1KHz/0.25V 12 ±10% 23.2 3.2 4.62 -40~125 9.5 9.5 12.5
83 TGKH0810-100K DIP-Induktivität 1KHz/0.25V 10 ±10% 20.4 3.7 4.93 -40~125 9.5 9.5 12.5
84 TGKH0810-6R8M DIP-Induktivität 1KHz/0.25V 6.8 ±10% 13.9 4.4 5.96 -40~125 9.5 9.5 12.5
85 TGKH0810-4R7M DIP-Induktivität 1KHz/0.25V 4.7 ±10% 12.5 5 6.29 -40~125 9.5 9.5 12.5
86 TGKH0810-3R3M DIP-Induktivität 1KHz/0.25V 3.3 ±10% 10.5 5.8 6.87 -40~125 9.5 9.5 12.5
87 TGKH0810-2R2M DIP-Induktivität 1KHz/0.25V 2.2 ±10% 8.1 7.2 7.82 -40~125 9.5 9.5 12.5
88 TGKH0810-1R0M DIP-Induktivität 1KHz/0.25V 1 ±10% 5.5 10.5 9.49 -40~125 9.5 9.5 12.5
89 TGKH0608-102K DIP-Induktivität 1KHz/0.25V 1000 ±10% 2404 0.26 0.38 -40~125 7.5 7.5 10.5
90 TGKH0608-821K DIP-Induktivität 1KHz/0.25V 820 ±10% 1881 0.27 0.42 -40~125 7.5 7.5 10.5
91 TGKH0608-681K DIP-Induktivität 1KHz/0.25V 680 ±10% 1561 0.29 0.46 -40~125 7.5 7.5 10.5
92 TGKH0608-561K DIP-Induktivität 1KHz/0.25V 560 ±10% 1356 0.32 0.5 -40~125 7.5 7.5 10.5
93 TGKH0608-471K DIP-Induktivität 1KHz/0.25V 470 ±10% 1104 0.34 0.55 -40~125 7.5 7.5 10.5
94 TGKH0608-391K DIP-Induktivität 1KHz/0.25V 390 ±10% 981 0.36 0.6 -40~125 7.5 7.5 10.5
95 TGKH0608-331K DIP-Induktivität 1KHz/0.25V 330 ±10% 789 0.42 0.67 -40~125 7.5 7.5 10.5
96 TGKH0608-271K DIP-Induktivität 1KHz/0.25V 270 ±10% 653 0.46 0.74 -40~125 7.5 7.5 10.5
97 TGKH0608-221K DIP-Induktivität 1KHz/0.25V 220 ±10% 530 0.5 0.82 -40~125 7.5 7.5 10.5
98 TGKH0608-181K DIP-Induktivität 1KHz/0.25V 180 ±10% 443 0.55 0.89 -40~125 7.5 7.5 10.5
99 TGKH0608-151K DIP-Induktivität 1KHz/0.25V 150 ±10% 386 0.59 0.98 -40~125 7.5 7.5 10.5
100 TGKH0608-121K DIP-Induktivität 1KHz/0.25V 120 ±10% 298 0.67 1.09 -40~125 7.5 7.5 10.5

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